KSD794

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD794 DESCRIPTION ·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·Complement to Type KSB744 APPLICATIONS ·Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 3A ICP Collector Current-Pulse 5A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.6 A 10 W 1 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD794 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A ICBO Collector Cutoff Current VCB= 45V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz MIN TYP. MAX UNIT 2.0 V 2.0 V 1.0 μA 1.0 μA 30 60 320 60 MHz 40 pF ‹ hFE-2 Classifications ROY 60-120 100-200 160-320 isc website：www.iscsemi.cn 2...