INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KSD985
DESCRIPTION ·Colle...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
KSD985
DESCRIPTION ·Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min.) ·DC Current Gain-
: hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage
APPLICATIONS ·They are suitable for use to operate from IC without
predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
1.5 A
ICM Collector Current-Pulse
3.0 A
IB Base Current
Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
0.15 A
1.0 W
10
150 ℃
-55~150 ℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
KSD985
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 1mA
ICBO Collector Cutoff Current
VCB= 60V; IE= 0
ICER Collector Cutoff Current
VCE=60V;RBE=51Ω;TC=125℃
ICEX Collector Cutoff Current IEBO Emitter Cutoff Current
VCE= 60V; VBE(off)= -1.5A
VCE= 60V; VBE(off)= -1.5A TC=125℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
1000
1.5 V 2.0 V 10 μA 1.0 mA 10 μA 1.0 mA 2.0 mA
hFE-2
DC Curr...