Schottky Barrier Rectifier
MBR3040CT
FEATURES ·Schottky Barrier Chip ·Dual Rectifier Conduction, Positive Center Tap ·...
Schottky Barrier Rectifier
MBR3040CT
FEATURES ·
Schottky Barrier Chip ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
40
V
28
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 100℃
30
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
200
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
MBR3040CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 1.5
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
IF= 15A ; TC= 25℃
VF
Maximum Instantaneous Forward Voltage IF= 30A ; TC= 25℃
IF= 30A ; TC= 125℃
IR
Maximum Instantaneous Reverse Current
Rated DC Voltage, TC...