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MJE8501

Inchange Semiconductor

Silicon NPN Power Transistor


Description
isc Silicon NPN Power Transistor MJE8501 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic...



Inchange Semiconductor

MJE8501

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