MJH11017

isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.5V(Max)@ IC= -10A = -4.0V(Max)@ IC= -15A ·Complement to Type MJH11018 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC=...