MJH11018

isc Silicon NPN Darlington Power Transistor MJH11018 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A ·Complement to Type MJH11017 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 30 IB Base Current- Continuous 0.5 PC Collector Power Dissipation @TC=25℃ 150 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A ,IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 15A ,IB= 0.15A VBE(on) B...