MMBR911L

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR911L DESCRIPTION ·High Gain GNF = 17 dB TYP. @ IC= 10 mA, f = 500 MHz ·Low Noise Figure NF= 1.7dB TYP. @ f= 500 MHz ·High Current-Gain Bandwidth Product fT = 6.0 GHz TYP. @ IC= 30 mA APPLICATIONS ·Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’S. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 2V 60 mA 0.333 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR911L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.05 μA hFE DC Current Gain IC= 30mA ; VCE= 10V 30 200 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 1.0 pF fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 10V; f= 1GHz 6.0 GHz GNF Gain@ Noise Figure GNF Gain@ Noise Figure NF Noise Figure IC= 10mA ; VCE= 10V; f= 0.5GHz IC= 10mA ; VCE=...