isc Silicon NPN RF Transistor
INCHANGE Semiconductor
MMBR931L
DESCRIPTION ·Low Noise Figure
NF = 4.3 dB TYP. @VCE = 1 ...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
MMBR931L
DESCRIPTION ·Low Noise Figure
NF = 4.3 dB TYP. @VCE = 1 V, IE = 0.25 mA, f = 1 GHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed primarily for use in low-power amplifiers to 1.0
GHz ,Ideal for pagers and other battery operated systems where power consumption is critical.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
10
V
VCEO Collector-Emitter Voltage
5
V
VEBO Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC= 75℃
TJ
Junction Temperature
5
mA
0.15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
MMBR931L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0
5
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.01mA ; IE= 0
10
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
2
V
ICBO
Collector Cutoff Current
VCB= 5V; IE= 0
50
nA
hFE
DC Current Gain
IC= 0.25mA ; VCE= 1V
50
150
COB
Output Capacitance
IE= 0; VCB= 1V; f= 1MHz
0.5 pF
GNF
Power Gain at Optimum Figure
IE= 0.25mA ; VCE= 1V; f= 1GHz
10
dB
NF
Noise Figure
IE= 0.25mA ; VCE= 1V; f= 1GHz
4.3
dB
NOTICE: ...