MMBR941L

isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 50 mA 0.25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 10 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 20 V IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.1 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 6V 50 200 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.35 pF fT Current-Gain—Bandwidth Product IC= 15mA ; VCE= 6V; f= 1GHz 8 GHz ︱S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 6V;f= 1.0GHz 14 dB ︱S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 6V;f= 2.0GHz 8.0 dB GU max Maximum Unilateral Gain IC= 15mA ; ...