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KSD5075T
Silicon NPN Power Transistor
Description
INCHANGE Semiconductor isc Silicon
NPN
Power
Transistor
isc Product Specification KSD5075T DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Electronic ballast applicaition ·High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas...
Inchange Semiconductor
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