N-Channel High Density Trench MOSFET
TECH MOS Technology. N-Channel High Density Trench MOSFET
TM3404GN TM3404FN
PRODUCT SUMMARY
VDSS
ID RDS(on) (mΩ) Max...
Description
TECH MOS Technology. N-Channel High Density Trench MOSFET
TM3404GN TM3404FN
PRODUCT SUMMARY
VDSS
ID RDS(on) (mΩ) Max
28 @ VGS = 10V 30V 5.8A
48 @ VGS = 4.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
SOT-23-3L
D S
G
D
G S
Ordering Information
TM3404
N
Package Type : SOT-23-3L
F : Pb Free G : Green (Halogen Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C -Pulse b
Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25ºC
TA=75ºC Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD
TJ,TSTG
Limit
30 ± 20 5.8 23 4.3 1.25 0.75
- 55 to 150
Unit
V V A A A W
°C
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambienta
:Note
a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature.
DS-TM3404GN-01 May , 2008
RthJA 1
100 °C/W
TM3404GN
TM3404FN
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Condition
Min Typc Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V , ID = 250uA
30
V
Zero Gate Voltage Drain Current
IDSS VDS = 24V , VGS = 0V
1 uA
Gate-Body Leakage
IGSS VGS = 20V , VDS = 0V
100 nA
ON CHARACTERISTICSb
Gate Threshold Voltage
VGS(th) VDS = VGS , ID = 250uA
1 1.4 3 V
Drain-Source On-State Resistance
RDS(on)
VGS = 10V , ID = 5.8A V...
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