TM3404FN

TECH MOS Technology. N-Channel High Density Trench MOSFET TM3404GN TM3404FN PRODUCT SUMMARY VDSS ID RDS(on) (mΩ) Max 28 @ VGS = 10V 30V 5.8A 48 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3L D S G D G S Ordering Information TM3404 N Package Type : SOT-23-3L F : Pb Free G : Green (Halogen Free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25ºC TA=75ºC Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 30 ± 20 5.8 23 4.3 1.25 0.75 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta ：Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. DS-TM3404GN-01 May , 2008 RthJA 1 100 °C/W TM3404GN TM3404FN ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = 250uA 30 V Zero Gate Voltage Drain Current IDSS VDS = 24V , VGS = 0V 1 uA Gate-Body Leakage IGSS VGS = 20V , VDS = 0V 100 nA ON CHARACTERISTICSb Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA 1 1.4 3 V Drain-Source On-State Resistance RDS(on) VGS = 10V , ID = 5.8A V...