BUL49D

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL49D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Very High Switching Speed APPLICATIONS ·Electronic transformers for halogen lamps ·Flyback and forward single transistor low power converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 10 A 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4 80 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 1.56 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL49D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VCE(sat)-3 Collector-Emitter Saturation Voltage ...