INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUS131H
DESCRIPTION ·High Switching ...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
BUS131H
DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)
APPLICATIONS ·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage (VBE= 0)
850
V
VCEO Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IB Base Current
4A
IBM Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
8 125 200 -65~200
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
BUS131H
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH
450
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
1.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
2.5 V
VBE(sat) Base-Emitter Saturation Voltage ICEV Collector Cutoff Current IEBO Emitter Cutoff Current
IC= 3A; IB= 0.3A
VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃
VEB= 6V; IC= 0
1.5 V
0.25 1.5
mA
1 mA
hFE D...