BUS133

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS133/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS133 500V (Min)-BUS133A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS133 850 BUS133A 1000 V VCEO Collector-Emitter Voltage BUS133 BUS133A 450 500 V VEBO IC ICM IB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 15 20 10 15 175 200 -65~200 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS133/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS133 BUS133A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitter Saturation Voltage BUS133 IC= 5A; IB= 0.7A BUS133A IC= 5A; IB= 1A 2.5 V 1.0 VCE(sat)-2 Collector-Emitter Saturation Voltage BUS133 IC= 10A; IB= 1.3A BUS133A IC= 10A; IB= 2A 3.0 V 1.5 VBE(sat) ICEV IEBO Base-Emitter Saturation Voltage BUS13...