BUX33B

isc Silicon NPN Power Transistor BUX33B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage VCE(sat)-1 Collector-Emitter Voltage VCE(sat)-2 Collector-Emitter Voltage Sustaining IC= 50mA; IB= 0 Saturation IC= 8A; IB= 2A Saturation IC= 12A; IB= 3A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 8A; IB= 2A VCB=1000V; IE= 0 VCB=1000V; IE= 0;TC= 100℃ IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE DC Current Gain IC= 8A; VCE= 3V BUX33B MIN TYP MAX UNIT 500 V 1.0 V 4.0 V 1.3 V 0.1 1.0 mA 2.0 m...