BUX66B

isc Silicon PNP Power Transistors BUX66B/C DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage BUX66B BUX66C VCEO Collector-Emitter Voltage BUX66B BUX66C VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Peak IB Base Current PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE UNIT -350 V -400 -300 V -350 -6 V -2.0 A -5.0 A -1.0 A 35 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 5.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUX66B BUX66C IC= -50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.15A ICEO Collector Cutoff Current VCE= -150...