BUX77

isc Silicon NPN Power Transistor BUX77 DESCRIPTION ·Contunuous Collector Current-IC= 5A ·Collector Power Dissipation- : PC= 40W @TC= 25℃ ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 0.8 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCES Collector-Emitter Voltage IC= 2mA; VBE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; IB= 0.5A ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 60V; IB= 0 VCB= 80V; IE= 0 VCB= 80V; IE= 0, TC=150℃ VEB= ...