isc Silicon NPN Power Transistor
BUX77A
DESCRIPTION ·Contunuous Collector Current IC= 8A ·Collector Power Dissipation-...
isc Silicon
NPN Power
Transistor
BUX77A
DESCRIPTION ·Contunuous Collector Current IC= 8A ·Collector Power Dissipation-
: PC= 50W @TC= 25℃ ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching
regulators and general purpose
power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5
℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCES
Collector-Emitter Voltage
IC= 2mA; VBE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; IB= 0.5A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 60V; IB= 0
VCB= 80V; IE= 0 VCB= 80V; IE= 0, TC=150℃
VEB= 4...