SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS
BUX77A / BUX78A
• High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching
and Amplifier Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC Continuous Collector Current
IB Base Current
PD Total Power Dissipation at TC = 25°C
Derate Above 25°C
TJ Junction Temperature Range
Tstg Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
BUX77A NPN
BUX78A PNP
100V
-100V
80V -80V
6V -6V
8A
2A
40W
0.23W/°C
-65 to +200°C
-65 to +200°C
Min. Typ. Max. Units 4.4 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email:
[email protected]
Website: http://www.semelab-tt.com
Document Number 7743 Issue 2
Page 1 of 3
SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (1)
Symbols Parameters
Test Conditions
V(BR)CEO(2) V(BR)CES V(BR)EBO ICEO
Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IC = 50mA IC = 2mA IE = 1.0mA VCE = 60V
IB = 0 VBE = 0 IC = 0 IB = 0
ICBO
Collector Cut-Off Current
VCB = 80V
IE = 0 TC = 150°C
IEBO
Emitter Cut-Off Current
VEB = 4V
IC = 0
IC = 0.5A
VCE = 5V
hFE(2)
Forward-current transfer ratio
IC = 2A IC = 5A IC = 1.0A
VCE = 5V VCE = 5V VCE = 5V
VCE(sat)(2) VBE(sat)(2)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
IC = 5A IC = 5A
TC = -40°C IB = 0.5A IB = 0.5A
DYNAMIC CHARACTERISTICS
|hfe|
Small signal forward-current transfer ratio
ton Turn-On Time
toff Turn-Off Time
IC = 0.5A
VCE = 5V
f = 20MHz
IC = 5A IB1 = 0.5A
VCC = 40V
IC = 5A
VCC = 40V
IB1 = - IB2 = 0.5A
Notes (1) For PNP (BUX78A) device, voltage and current values are negative (2) Pulse Width ≤ 300us, δ ≤ 2%
Min. Typ Max. Units 80
100 V
6 10 0.5 µA 150 0.5
50 50 250 30
25
1.0 V
1.3
1.5 0.3 0.4 1.1 2.5
µs
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email:
[email protected]
Website: http://www.semelab-tt.com
Document Number 7743 Issue 2
Page 2 of 3
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500)
SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A
MECHANICAL DATA
Dimensions in mm (inches)
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
6.35 (0.250) 8.64 (0.340)
12
4.83 (0.190) 5.33 (0.210)
9.14 (0.360) min.
1.27 (0.050) 1.91 (0.750)
TO66 (TO-213AA)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email:
[email protected]
Website: http://www.semelab-tt.com
Document Number 7743 Issue 2
Page 3 of 3
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