TSP10N60C
®
TSP10N60C
Pb Free Plating Product
Pb
10.3A,600V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on)...
TSP10N60C
®
TSP10N60C
Pb Free Plating Product
Pb
10.3A,600V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested
1. Gate {
{ 2. Drain
●
◀▲
● ●
{ 3. Source
BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A
General Description
This N-channel enhancement mode field-effect power
transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for adaptor power unit and small power inverter application.
Absolute Maximum Ratings
TO-220
23 1
Symbol
Parameter
VDSS ID
Drain to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C)
IDM VGS EAS EAR dv/dt
Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy ...
