STN2300

N-Channel Enhancement Mode MOSFET STN2300 ■DESCRIPTION 20V N-Channel Enhancement Mode MOSFET ■FEATURE The STN2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation gate as 1.8V. This device is suitable for use as a load switch or other general applications. STN2300S-TRG ROHS Compliant This is Halogen Free  20V/4.0A, RDS(ON) =22mΩ(typ.)@VGS =4.5V  20V/3.0A, RDS(ON) =27mΩ(typ.)@VGS =2.5V  20V/2.0A, RDS(ON) =37mΩ(typ.)@VGS =1.8V  Super high density cell design for extremely low Gate Charge  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Power Management in Note book  Portable Equipment  Load Switch ■PIN CONFIGURATION Drain Source Gate SOT-23 Top View ■PART NUMBER INFORMATION ST N 2300 S - TR G a b c d ef D G S a : Company name. b : Channel type. c : Product Serial number. d : Package code e : Handling code f : Green product code STN2300 Rev.1.8 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code STN2300S-TRG S : SOT-23 ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-23 : Only available in tape and reel packaging. STN2300 Handling Code TR : Tape&Reel Shipping 3K/Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical VDSS Drain-Source Voltage 20 VGSS Gate-Source Volt...