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SMC2333 Dataheets PDF



Part Number SMC2333
Manufacturers Semtron
Logo Semtron
Description P-Channel Enhancement Mode MOSFET
Datasheet SMC2333 DatasheetSMC2333 Datasheet (PDF)

P-Channel Enhancement Mode MOSFET SMC2333 ■DESCRIPTION -20V P-Channel Enhancement Mode MOSFET ■FEATURE The SMC2333 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent small package RDS(ON).  -20V/-6.0A, RDS(ON) =22mΩ(typ)@VGS =-10V  -20V/-6.0A, RDS(ON) =26mΩ(typ)@VGS =-4.5V  -20V/-3.5A, RDS(ON) =33mΩ(typ)@VGS =-2.5V  -20V/-2.0A, RDS(ON) =43mΩ(typ)@VGS =-1.8V SMC2333S-TRG ROHS Complian.

  SMC2333   SMC2333



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P-Channel Enhancement Mode MOSFET SMC2333 ■DESCRIPTION -20V P-Channel Enhancement Mode MOSFET ■FEATURE The SMC2333 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent small package RDS(ON).  -20V/-6.0A, RDS(ON) =22mΩ(typ)@VGS =-10V  -20V/-6.0A, RDS(ON) =26mΩ(typ)@VGS =-4.5V  -20V/-3.5A, RDS(ON) =33mΩ(typ)@VGS =-2.5V  -20V/-2.0A, RDS(ON) =43mΩ(typ)@VGS =-1.8V SMC2333S-TRG ROHS Compliant This is Halogen Free  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability ■FEATURE  High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA  DC/DC Converter  Load Switch ■PIN CONFIGURATION Drain Source Gate SOT-23L Top View ■PART NUMBER INFORMATION SMC 2333 S - TR G a b c de D G S a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code SMC2333 Rev.1.1 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code SMC2333S-TRG S : SOT-23L ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-23L : Only available in tape and reel packaging. SMC2333 Handling Code TR : Tape&Reel Shipping 3K/Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 Continuous Drain Current (TC=25°C) A ID Continuous Drain Current (TC=70°C) A VGS=-10V -6.0 -5.0 IDM Pulsed Drain CurrentB PD Power Dissipation TJ Operation Junction Temperature TA=25°C TA=70°C -20 1.4 0.9 -55 to150 TSTG Storage Temperature Range -55 to150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Unit V V A A A W °C °C ■THERMAL DATA Symbol RθJA RθJL Parameter Thermal Resistance-Junction to AmbientA Thermal Resistance Junction to LeadA Steady-State Steady-State Typ - Max Unit 120 °C/W 80 °C/W SMC2333 Rev.1.1 Copyright © Semtron Microtech Corp. 2 www.semtron-micro.com SMC2333 ■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VGS=0V,ID=-250μA VDS=VGS,ID=-250μA -20 -0.6 V -1.0 V IGSS Gate Leakage Current VDS=0V,VGS=±12V IDSS RDS(ON) VDS=-20V,VGS=0V Zero Gate Voltage, Drain-Source TJ=25°C Leakage Current VDS=-20V,VGS=0V TJ=55°C VGS=-10V,ID=-6.0A Drain-source On-ResistanceB VGS=-4.5V,ID=-6.0A VGS=-2.5V,ID=-3.5A VGS=-1.8V,ID=-2.0A Source-Drain Doide ±100 nA -1 μA -5 22 25 26 33 30 38 mΩ 43 50 VSD Diode Forward Voltage IS=-1.0A,VGS=0V -0.7 -1.0 V IS Continuous Source CurrentAD -1 A Dynamic Parameters Qg (-4.5V) Qgs Qgd Total Gate Charge Gate-Source Cha.


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