Document
P-Channel Enhancement Mode MOSFET
SMC2333
■DESCRIPTION
-20V P-Channel Enhancement Mode MOSFET
■FEATURE
The SMC2333 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent small package RDS(ON).
-20V/-6.0A, RDS(ON) =22mΩ(typ)@VGS =-10V -20V/-6.0A, RDS(ON) =26mΩ(typ)@VGS =-4.5V -20V/-3.5A, RDS(ON) =33mΩ(typ)@VGS =-2.5V -20V/-2.0A, RDS(ON) =43mΩ(typ)@VGS =-1.8V
SMC2333S-TRG ROHS Compliant This is Halogen Free
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
■FEATURE
High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA
DC/DC Converter Load Switch
■PIN CONFIGURATION
Drain
Source Gate
SOT-23L Top View
■PART NUMBER INFORMATION
SMC 2333 S - TR G a b c de
D
G
S
a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code
SMC2333 Rev.1.1 Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com
■ORDERING INFORMATION
Part Number
Package Code
SMC2333S-TRG
S : SOT-23L
※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-23L : Only available in tape and reel packaging.
SMC2333
Handling Code TR : Tape&Reel
Shipping 3K/Reel
■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted )
Symbol
Parameter
Typical
VDSS Drain-Source Voltage
-20
VGSS Gate-Source Voltage
±12
Continuous Drain Current (TC=25°C) A ID Continuous Drain Current (TC=70°C) A
VGS=-10V
-6.0 -5.0
IDM Pulsed Drain CurrentB PD Power Dissipation TJ Operation Junction Temperature
TA=25°C TA=70°C
-20
1.4 0.9
-55 to150
TSTG Storage Temperature Range
-55 to150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Unit V V A A A
W
°C °C
■THERMAL DATA
Symbol RθJA RθJL
Parameter Thermal Resistance-Junction to AmbientA Thermal Resistance Junction to LeadA
Steady-State Steady-State
Typ -
Max Unit 120 °C/W 80 °C/W
SMC2333 Rev.1.1 Copyright © Semtron Microtech Corp.
2
www.semtron-micro.com
SMC2333
■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted )
Symbol
Parameter
Condition
Min Typ Max Unit
Static Parameters
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
VGS=0V,ID=-250μA VDS=VGS,ID=-250μA
-20 -0.6
V -1.0 V
IGSS Gate Leakage Current
VDS=0V,VGS=±12V
IDSS RDS(ON)
VDS=-20V,VGS=0V
Zero Gate Voltage, Drain-Source TJ=25°C
Leakage Current
VDS=-20V,VGS=0V
TJ=55°C
VGS=-10V,ID=-6.0A
Drain-source On-ResistanceB
VGS=-4.5V,ID=-6.0A VGS=-2.5V,ID=-3.5A
VGS=-1.8V,ID=-2.0A
Source-Drain Doide
±100 nA
-1 μA
-5
22 25
26 33
30 38
mΩ
43 50
VSD Diode Forward Voltage
IS=-1.0A,VGS=0V
-0.7 -1.0 V
IS Continuous Source CurrentAD
-1 A
Dynamic Parameters
Qg (-4.5V) Qgs Qgd
Total Gate Charge Gate-Source Cha.