STN3406

N-Channel Enhancement Mode MOSFET STN3406 ■DESCRIPTION 30V N-Channel Enhancement Mode MOSFET ■FEATURE The STN3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent This device is suitable for use as a load switch or in PWM applications. STN3406S-TRG ROHS Compliant This is Halogen Free  30V/5.6A, RDS(ON) =23mΩ(typ.)@VGS =10V  30V/4.2A, RDS(ON) =35mΩ(typ.)@VGS =4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Power Management in Note book  Portable Equipment  DC/DC Converter ■PIN CONFIGURATION Drain Source Gate SOT-23L Top View ■PART NUMBER INFORMATION ST N 3406 S - TR G a b c d ef D G S a : Company name. b : Channel type. c : Product Serial number. d : Package code e : Handling code f : Green product code STN3406 Rev.2.0 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code STN3406S-TRG S : SOT-23L ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-23L : Only available in tape and reel packaging. STN3406 Handling Code TR : Tape&Reel Shipping 3K/Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Continuous Drain Current (TC=25°C) A ID Continuous Drain Current (TC=70°C) A VGS=10V 5.6 ...