INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2SJ376
DESCRIPTION ·Low Drain-Source ...
INCHANGE Semiconductor
isc P-Channel MOSFET
Transistor
isc Product Specification
2SJ376
DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode
APPLICATIONS ·High speed switching application ·Switching
regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
-60 V
Gate-Source Voltage
±15
V
Drain Current-continuous@ TC=37℃ -30 A
Total Dissipation@TC=25℃
50 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient
3.1 ℃/W 75 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc P-Channel Mosfet
Transistor
isc Product Specification
2SJ376
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -15A
IGSS Gate Source Leakage Current
VGS= -12V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= -60V,VGS= 0
VSD Diode Forward Voltage
IF=-20A;VGS= 0
MIN MAX UNIT
-60 V
-1.0 -2.0
V
0.045 Ω
-10 uA
-0.1 mA
-1.5 V
isc website:www.iscsemi.cn
2 isc & iscsemi is reg...