2SJ376

INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification 2SJ376 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) -60 V Gate-Source Voltage ±15 V Drain Current-continuous@ TC=37℃ -30 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 3.1 ℃/W 75 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc P-Channel Mosfet Transistor isc Product Specification 2SJ376 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -15A IGSS Gate Source Leakage Current VGS= -12V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -60V,VGS= 0 VSD Diode Forward Voltage IF=-20A;VGS= 0 MIN MAX UNIT -60 V -1.0 -2.0 V 0.045 Ω -10 uA -0.1 mA -1.5 V isc website：www.iscsemi.cn 2 isc & iscsemi is reg...