Document
NEW PRODUCT
DMP2066LVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -20V
RDS(ON) max
45mΩ @ VGS = -4.5V 65mΩ @ VGS = -2.5V
ID max TA = +25°C
-4.5A
-3.8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)), and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions
Features and Benefits
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate)
SOT26 Top View
D1 D2 G3
6D 5D 4S
Top View Pin-Out
D G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMP2066LVT-7 DMP2066LVT-13
Case SOT26 SOT26
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
26P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2011 Y
Jan Feb 12
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
Shanghai A/T Site
2012 Z
Mar 3
2013 A
Apr May 45
2014 B
Jun Jul 67
1 of 6 www.diodes.com
2015 C
Aug 8
Sep 9
2016 D
Oct O
2017 E
Nov Dec ND
February 2015
© Diodes Incorporated
DMP2066LVT
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous
Pulsed Drain Current (10μs pulse, duty cycle = 1%) Body-Diode Continuous Current (Note 5)
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IDM IS
Value -20 8 -4.5 -3.7
-20 -2.0
Unit V V
A
A A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range
Steady State t<10s
Steady State t<10s
Symbol PD RθJA PD RθJA
TJ, TSTG
Value 1.2 100 74 1.8 70 46
-55 to +150
Units W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic STATIC PARAMETERS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
@ TJ = +55°C (Note 8) Zero Gate Voltage Drain Current @TJ = +150°C (Note 8) Gate-Body Leakage Current Gate Threshold Voltage
Symbol
BVDSS IDSS IDSS IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Static Drain-Source On-Resistance @ TJ = +125°C (Note 8) Diode Forward Voltage On State Drain Current (Note 8) DYNAMIC PARAMETERS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
RDS (ON) VSD ID(ON)
Ciss Coss Crss QG QGS QGD td(on)
tr td(off)
tf
Min
-20
— -0.4
-0.5 10
Typ
— 25 33 -0.72 —
1,496 130 116 14.4 2.6 2.7 8.5 11 61 25
Max
-1 -10 -100 100 -1.5 45 65 72 -1.4 —
2,990 260 230 25
5 5.5 30 60 130 100
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V ID = -250µA, VGS = 0V μA VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V μA VDS = -16V, VGS = 0V nA VDS = 0V, VGS = 8V V VDS = VGS, ID = -250µA mΩ VGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.8A mΩ VGS = -4.5V, ID = -4.5A V IS = -2.1A, VGS = 0V A VDS ≦5V, VGS = 4.5V
pF pF VDS = -15V, VGS = 0V
f = 1.0MHz pF
nC VDS = -10V, VGS = -4.5V, ID = -4.5A
ns
VDS = -5V, VGS = -4.5V, ID = -1A, RG = 6.0Ω
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
2 of 6 www.diodes.com
February 2015
© Diodes Incorporated
.