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DMP2066LVT Dataheets PDF



Part Number DMP2066LVT
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP2066LVT DatasheetDMP2066LVT Datasheet (PDF)

NEW PRODUCT DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) max 45mΩ @ VGS = -4.5V 65mΩ @ VGS = -2.5V ID max TA = +25°C -4.5A -3.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)), and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions Features and Benefits  Low On-R.

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NEW PRODUCT DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) max 45mΩ @ VGS = -4.5V 65mΩ @ VGS = -2.5V ID max TA = +25°C -4.5A -3.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)), and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT26  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.015 grams (Approximate) SOT26 Top View D1 D2 G3 6D 5D 4S Top View Pin-Out D G S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMP2066LVT-7 DMP2066LVT-13 Case SOT26 SOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT26 26P = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y or = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan Feb 12 DMP2066LVT Document number: DS36578 Rev. 4 - 2 Shanghai A/T Site 2012 Z Mar 3 2013 A Apr May 45 2014 B Jun Jul 67 1 of 6 www.diodes.com 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov Dec ND February 2015 © Diodes Incorporated DMP2066LVT NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous Pulsed Drain Current (10μs pulse, duty cycle = 1%) Body-Diode Continuous Current (Note 5) TA = +25°C TA = +70°C Symbol VDSS VGSS ID IDM IS Value -20 8 -4.5 -3.7 -20 -2.0 Unit V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Steady State t<10s Steady State t<10s Symbol PD RθJA PD RθJA TJ, TSTG Value 1.2 100 74 1.8 70 46 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic STATIC PARAMETERS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TJ = +55°C (Note 8) Zero Gate Voltage Drain Current @TJ = +150°C (Note 8) Gate-Body Leakage Current Gate Threshold Voltage Symbol BVDSS IDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS (ON) Static Drain-Source On-Resistance @ TJ = +125°C (Note 8) Diode Forward Voltage On State Drain Current (Note 8) DYNAMIC PARAMETERS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time RDS (ON) VSD ID(ON) Ciss Coss Crss QG QGS QGD td(on) tr td(off) tf Min -20  —  -0.4   -0.5 10           Typ   —   25 33  -0.72 — 1,496 130 116 14.4 2.6 2.7 8.5 11 61 25 Max  -1 -10 -100 100 -1.5 45 65 72 -1.4 — 2,990 260 230 25 5 5.5 30 60 130 100 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. Unit Test Condition V ID = -250µA, VGS = 0V μA VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V μA VDS = -16V, VGS = 0V nA VDS = 0V, VGS = 8V V VDS = VGS, ID = -250µA mΩ VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = -3.8A mΩ VGS = -4.5V, ID = -4.5A V IS = -2.1A, VGS = 0V A VDS ≦5V, VGS = 4.5V pF pF VDS = -15V, VGS = 0V f = 1.0MHz pF nC VDS = -10V, VGS = -4.5V, ID = -4.5A ns VDS = -5V, VGS = -4.5V, ID = -1A, RG = 6.0Ω DMP2066LVT Document number: DS36578 Rev. 4 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated .


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