Document
NEW PRODUCT
DMP3037LSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) MAX
32mΩ @ VGS = -10V 50mΩ @ VGS = -4.5V
ID TA = +25°C
-5.8A -4.6A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
DC-DC converters Power management functions Backlighting
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (DMP3037LSSQ)
Mechanical Data
Package: SO-8 Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Plated over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Below Weight: 0.072 grams (Approximate)
SO-8 Top View
S
D
S
D
S
D
G
D
Top View Pin-Out
D
G S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMP3037LSS-13
Package SO-8
Qty. 2500
Packing
Carrier Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMP3037LSS
Document number: DS36775 Rev. 3 - 2
1 of 8 www.diodes.com
January 2022
© Diodes Incorporated
NEW PRODUCT
Marking Information
8
5
P3037LS
YY WW
1
4
Chengdu A/T Site
8
5
P3037LS
YY WW
1
4
Shanghai A/T Site
DMP3037LSS
= Manufacturer’s Marking P3037LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 22 = 2022) WW = Week (01 to 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test Site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test Site)
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (10µs Pulse, Duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IDM IAS EAS
Value -30 ±20 -5.8 -4.6 -40 -17
15
Unit V V
A
A A mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = +25°C TA = +70°C Steady State
t < 10s TA = +25°C TA = +70°C Steady State
t < 10s
Symbol PD
RθJA
PD
RθJA RθJC TJ, TSTG
Value 1.2 0.8 100 58 1.6 1.0 77 45 10
-55 to +150
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
Unit W °C/W W
°C/W °C
DMP3037LSS
Document number: DS36775 Rev. 3 - 2
2 of 8 www.diodes.com
January 2022
© Diodes Incorporated
NEW PRODUCT
DMP3037LSS
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Symbol
BVDSS IDSS IGSS
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
VSD
Ciss Coss .