Document
MUR30120
Ultra Fast Recovery Diodes
AC
C(TAB)
A C
A=Anode, C=Cathode, TAB=Cathode
Dimensions TO-247AC
MUR30120
VRSM V
1200
VRRM V
1200
Dim. Millimeter Min. Max.
A 19.81 20.32 B 20.80 21.46
C 15.75 16.26 D 3.55 3.65
E 4.32 5.49 F 5.4 6.2
G 1.65 2.13 H - 4.5
J 1.0 1.4 K 10.8 11.0
L 4.7 5.3 M 0.4 0.8
N 1.5 2.49
Inches Min. Max.
0.780 0.800 0.819 0.845
0.610 0.640 0.140 0.144
0.170 0.216 0.212 0.244
0.065 0.084 - 0.177
0.040 0.055 0.426 0.433
0.185 0.209 0.016 0.031
0.087 0.102
Symbol
Test Conditions
IFRMS IFAVM IFRM
IFSM
I2t
TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45oC TVJ=150oC
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
TVJ=45oC TVJ=150oC
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
TVJ TVJM Tstg
Ptot
TC=25oC
Md Mounting torque
Weight
Maximum Ratings
70 26 375
200 210 185 195
200 180 170 160
-40...+150 150
-40...+150
138
0.8...1.2
6
Unit A
A
A2s
oC W Nm g
MUR30120
Ultra Fast Recovery Diodes
Symbol
Test Conditions
IR
VF
VTO rT RthJC RthCK RthJA trr IRM
TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=30A; TVJ=150oC
TVJ=25oC For power-loss calculations only TVJ=TVJM
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC VR=540V; IF=30A; -diF/dt=240A/us; L<_0.05uH; TVJ=100oC
Characteristic Values typ. max.
750 250
7
2.2 2.55
1.65
18.2
0.9 0.25
35
40 60
16 18
Unit
uA uA mA V V m
K/W
ns A
FEATURES
* International standard package JEDEC TO-247AC
* Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices
* Antisaturation diode * Snubber diode * Free wheeling diode in converters
and motor control circuits * Rectifiers in switch mode power
supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced
protection circuits * Low noise switching * Low losses * Operating at lower temperature or
space saving by reduced cooling
MUR30120
Ultra Fast Recovery Diodes
70 A 60
50 IF
40
30
TVJ=25°C TVJ=100°C TVJ=150°C
20
10
0 0123 VF
Fig. 1 Forward current versus voltage drop.
V
4
6
µC
TVJ=100°C VR= 540V
5
4 Qr
3
IF=30A IF=60A IF=30A IF=15A
2 max.
1
typ.
50
A
TVJ=100°C VR= 540V
40
IRM 30
IF=30A IF=60A IF=30A IF=15A
20
10
max. typ.
0 1 10 100 A/µs 1000 -diF/dt
Fig. 2 Recovery charge versus -diF/dt.
0 0 200 400 A/µs 600 -diF/dt
Fig. 3 Peak reverse current versus -di /dt.
F
1.4
1.2
1.0 Kf
0.8
IRM
0.6 QR
0.4
0.2
0.0 0
40 80 TJ
120 °C 160
Fig. 4 Dynamic parameters versus junction temperature.
1.0 µs 0.8
trr 0.6
0.4
max.
TVJ=100°C VR=540V
IF=30A IF=60A IF=30A IF=15A
0.2 typ.
0.0 0
200 400 A/µs 600 -diF/dt
Fig. 5 Recovery time versus -diF/dt.
60 V 50
40 VFR
30
VFR
1200 ns
1000
800 tfr
600
20 400
10
0 0
tfr
200 diF/dt
TVJ=125°C IF=30A
200 0
400 A/µs 600
Fig. 6 Peak forward voltage versus diF/dt.
1.0 K/W
0.8 ZthJC
0.6
0.4
0.2
0.0 0.001
0.01
0.1 1 s t
Fig. 7 Transient thermal impedance junction to case.
10
.