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MUR30120 Dataheets PDF



Part Number MUR30120
Manufacturers Sirectifier
Logo Sirectifier
Description Ultra Fast Recovery Diodes
Datasheet MUR30120 DatasheetMUR30120 Datasheet (PDF)

MUR30120 Ultra Fast Recovery Diodes AC C(TAB) A C A=Anode, C=Cathode, TAB=Cathode Dimensions TO-247AC MUR30120 VRSM V 1200 VRRM V 1200 Dim. Millimeter Min. Max. A 19.81 20.32 B 20.80 21.46 C 15.75 16.26 D 3.55 3.65 E 4.32 5.49 F 5.4 6.2 G 1.65 2.13 H - 4.5 J 1.0 1.4 K 10.8 11.0 L 4.7 5.3 M 0.4 0.8 N 1.5 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 - 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Symbol Te.

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MUR30120 Ultra Fast Recovery Diodes AC C(TAB) A C A=Anode, C=Cathode, TAB=Cathode Dimensions TO-247AC MUR30120 VRSM V 1200 VRRM V 1200 Dim. Millimeter Min. Max. A 19.81 20.32 B 20.80 21.46 C 15.75 16.26 D 3.55 3.65 E 4.32 5.49 F 5.4 6.2 G 1.65 2.13 H - 4.5 J 1.0 1.4 K 10.8 11.0 L 4.7 5.3 M 0.4 0.8 N 1.5 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 - 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Symbol Test Conditions IFRMS IFAVM IFRM IFSM I2t TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ=45oC TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Maximum Ratings 70 26 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 138 0.8...1.2 6 Unit A A A2s oC W Nm g MUR30120 Ultra Fast Recovery Diodes Symbol Test Conditions IR VF VTO rT RthJC RthCK RthJA trr IRM TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=30A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC VR=540V; IF=30A; -diF/dt=240A/us; L<_0.05uH; TVJ=100oC Characteristic Values typ. max. 750 250 7 2.2 2.55 1.65 18.2 0.9 0.25 35 40 60 16 18 Unit uA uA mA V V m K/W ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR30120 Ultra Fast Recovery Diodes 70 A 60 50 IF 40 30 TVJ=25°C TVJ=100°C TVJ=150°C 20 10 0 0123 VF Fig. 1 Forward current versus voltage drop. V 4 6 µC TVJ=100°C VR= 540V 5 4 Qr 3 IF=30A IF=60A IF=30A IF=15A 2 max. 1 typ. 50 A TVJ=100°C VR= 540V 40 IRM 30 IF=30A IF=60A IF=30A IF=15A 20 10 max. typ. 0 1 10 100 A/µs 1000 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 0 0 200 400 A/µs 600 -diF/dt Fig. 3 Peak reverse current versus -di /dt. F 1.4 1.2 1.0 Kf 0.8 IRM 0.6 QR 0.4 0.2 0.0 0 40 80 TJ 120 °C 160 Fig. 4 Dynamic parameters versus junction temperature. 1.0 µs 0.8 trr 0.6 0.4 max. TVJ=100°C VR=540V IF=30A IF=60A IF=30A IF=15A 0.2 typ. 0.0 0 200 400 A/µs 600 -diF/dt Fig. 5 Recovery time versus -diF/dt. 60 V 50 40 VFR 30 VFR 1200 ns 1000 800 tfr 600 20 400 10 0 0 tfr 200 diF/dt TVJ=125°C IF=30A 200 0 400 A/µs 600 Fig. 6 Peak forward voltage versus diF/dt. 1.0 K/W 0.8 ZthJC 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 s t Fig. 7 Transient thermal impedance junction to case. 10 .


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