MUR3020

INCHANGE Semiconductor Ultrafast Recovery Rectifier Product Specification MUR3020 FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds APPLICATIONS ·Designed for use in switching power supplies, inverters and as free wheeling diodes. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRW M VR IF(AV) IFRM IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz) 200 30 30 300 V A A A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor Ultrafast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Product Specification MUR3020 MAX 1.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 30A IR Maximum Instantaneous Reverse Current VRRM= 200V trr Maximum Re...