STP75NS04Z. P75NS04Z Datasheet

P75NS04Z STP75NS04Z. Datasheet pdf. Equivalent

P75NS04Z Datasheet
Recommendation P75NS04Z Datasheet
Part P75NS04Z
Description STP75NS04Z
Feature P75NS04Z; STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET Ge.
Manufacture STMicroelectronics
Datasheet
Download P75NS04Z Datasheet




STMicroelectronics P75NS04Z
STP75NS04Z
N-channel Clamped - 7m- 80A - TO-220
Fully protected MESH Overlay™ III Power MOSFET
General features
Type
STP75NS04Z
VDSS
Clamped
RDS(on)
< 11m
ID
80A
Low capacitance and gate charge
100% avalanche tested
175°C maximum junction temperature
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of a new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encoured in
power tools. Any other application requiring extra
ruggedness is also recommended.
Applications
Switching application
Power tools
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STP75NS04Z
Marking
P75NS04Z
Package
TO-220
Packaging
Tube
June 2006
Rev 1
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www.st.com
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STMicroelectronics P75NS04Z
Contents
Contents
STP75NS04Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STMicroelectronics P75NS04Z
STP75NS04Z
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VDG Drain-gate voltage (VGS = 0)
VGS Gate-source voltage
ID(1) Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDG Drain gate current (continuos)
IGS Gate source current (continuos)
IDM(2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
VESD Gate-source ESD (HBM-C=100pF, R=1.5KΩ)
Tj Operating junction temperature
Tstg Storage temperature
1. Current limited by wire bonding
2. Pulse with limited by safe operating area
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Table 3. Avalanche data
Symbol
Parameter
EAS
Single pulse avalanche energy (starting Tj=25°C,
ID=IAR, VDD=25V)
Value
Clamped
Clamped
Clamped
80
63
±50
±50
320
110
0.73
±8
-55 to 175
Value
1.36
62.5
300
Value
470
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
kV
°C
Unit
°C/W
°C/W
°C
Unit
mJ
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