Document
P-Channel Enhancement Mode MOSFET with Schottky Diode
STC5853
P-Channel Enhancement Mode MOSFET with Schottky Diode
■DESCRIPTION
The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package.
■FEATURE
MOSFET -20V/-3.5A, RDS(ON) =70mΩ@VGS =-4.5V -20V/-2.4A, RDS(ON) =95mΩ@VGS =-2.5V -20V/-1.8A, RDS(ON) =125mΩ@VGS =-1.8V
SCHOTTKY VKA = 20V, VF=0.43V(Typ.)@ IF = 1A Full RoHS compliance DFN3X2-8L package design
■APPLICATIONS
Battery Powered System Notebook Power Management Cell Phone
■PIN CONFIGURATION
PIN1
A A SG
DK
KKDD
TOP VIEW DFN3X2-8L
G
S P-Channel Mosfet
A Schottky Diode
■PART NUMBER INFORMATION
STC5853XX-XX X
Lead Plating Code Handling Code Package Code
Lead Plating Code G : Lead-free product. This product is RoHS compliant
Handling Code TR : Tape&Reel
Package Code DF : DFN3X2-8L
STC5853DF Rev.1.0 Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com
■ORDERING INFORMATION
Part Number
Package Code
Package
STC5853DF-TRG
DF
DFN3X2-8L
※ Year Code : 0 ~ 9 ※ Week Code : A ~ Z(1~26) ; a ~ z(27~52) ※ DFN3X2-8L : Only available in tape and reel packaging. (A reel contains 3000 devices) ※ G : Lead-free product. This product is RoHS compliant
STC5853
Shipping 3000 /Tape&Reel
■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted )
Symbol
Parameter
Typical
P-Channel MOSFET
VDSS
Drain-Source Voltage
-20
VGSS ID IDM
Gate-Source Voltage Continuous Drain Current (TJ=150°C) Pulsed Drain Current
TA=25°C TA=70°C
±12
-3.5 -2.8
-15
IS Continuous Source Current (Diode Conduction)
-1.4
TJ Operation Junction Temperature
-55~150
TSTG PD RθJA Schottky
Storage Temperature Range Power Dissipation Thermal Resistance-Junction to Ambient
TA=25°C TA=70°C
T ≤ 10sec Steady State
-55~150
1.25 0.8 65 95
VKA Reverse Voltage
20
IF Continuous Drain Current
TA=25°C TA=70°C
1 0.7
IFM Pulsed Drain Current
10
PD Power Dissipation
TA=25°C TA=70°C
0.9 0.6
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Unit
V V A A A °C W W °C/W
V A A W
STC5853DF Rev.1.0 Copyright © Semtron Microtech Corp.
2
www.semtron-micro.com
STC5853
■ELECTRICAL CHARACTERISTICS(TA = 25℃ Unless otherwise noted )
Symbol
Parameter
MOSFET Dynamic Parameters
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
RDS(ON) Drain-source On-Resistance
Gfs Forward Transconductance
MOSFET Dynamic Parameters
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) tr
Turn-On Time
td(off) tf
Turn-Off Time
Condition
VGS =0V,ID =250μA VDS =VGS,ID =-250μA VDS =0V,VGS=±12V VDS =-20V,VGS =0V VDS =-20V,VGS =0V
TJ =55℃ VGS =-4.5V,ID=-3.5A VGS =-2.5V, ID=-2.4A VGS =-1.8V, ID=-1.8A VDS =-5V,ID =-2.8A
VDS =-6V,VGS =-4.5V ID =-2.8A
VDS =-6V,VGS =0V f =1MHz
VDD =-6V,RL =6Ω ID =-1.0A,VGEN =-4.5V
RG =6Ω
Min Typ Max Unit
-20 V -0.4 -0.9 V
±100 nA -1 μA -5
70 80
95 110 mΩ
125 140
6S
4.8 8 1.0 nC 1.0 485 85 pF 40 10 16 13 23
nS 18 25 15 20
■ELECTRICAL CHARACTERISTICS(TA = 25℃ Unless otherwise noted )
Symbol
Parameter
Schottky Parameters
VF Forward Voltage Drop
VBR Reverse Breakdown Voltage
Irm Maximum reverse leakage current
CT Junction Capacitance Trr SchottkyReverse Recovery Time Qrr Schottky Reverse Recovery Charge
Condition
IF =1A IR =500μA VR =23V VR =23V , TJ=70℃ VR = 10V VR =0V , f=1MHz IF =1A, dI/dt =100A/μs IF =1A, dI/dt =100A/μs
Min Typ Max Unit
0.43 0.47 V
20 V
0.1 1
mA
31 120
pF
5.4 10 nS
0.8 nC
STC5853DF Rev.1.0 Copyright © Semtron Microtech Corp.
3
www.semtron-micro.com
■TYPICAL CHARACTERISTICS (MOSFET)
STC5853
-ID-Drain Current(A)
Output Characteristics 8
VGS=-5~ -2.5V
6 -2V
4
-1.5V
2
-1V
0 0 1 2 3 45 6 7 8 -VDS-Drain Source Voltage(V)
-ID-Drain Current(A)
Transfer Characteristics
8
TJ=25°C
TJ=125°C
6 TJ=55°C
4
2
0 0123
-VGS-Gate Source Voltage(V)
4
RDS(ON)(mΩ)
Drain Source On Resistance 300
250
200
150 VGS=-1.8V 100
50
VGS=-2.5V VGS=-4.5V
0 0 1.5 3 4.5 6
-ID-Drain Current(A)
7.5
Normalized Threshold Voltage
Gate Threshold Voltage 1.2
1 0.8
0.6 0.4 0.2
0 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C)
-VGS(V)
Gate Charge 5
4 VDS=10V 3 ID=-2.9A
2
1
0 0 1 23 4 5 67 8 QG-Gate Charge(nC)
Normalized On Resistance
Drain Source On Resistance
1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 -50 -25 0 25 50 75 100 125 150
TJ-Junction Temperature(°C)
STC5853DF Rev.1.0 Copyright © Se.