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STC5853 Dataheets PDF



Part Number STC5853
Manufacturers Semtron
Logo Semtron
Description P-Channel Enhancement Mode MOSFET
Datasheet STC5853 DatasheetSTC5853 Datasheet (PDF)

P-Channel Enhancement Mode MOSFET with Schottky Diode STC5853 P-Channel Enhancement Mode MOSFET with Schottky Diode ■DESCRIPTION The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a.

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P-Channel Enhancement Mode MOSFET with Schottky Diode STC5853 P-Channel Enhancement Mode MOSFET with Schottky Diode ■DESCRIPTION The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. ■FEATURE MOSFET  -20V/-3.5A, RDS(ON) =70mΩ@VGS =-4.5V  -20V/-2.4A, RDS(ON) =95mΩ@VGS =-2.5V  -20V/-1.8A, RDS(ON) =125mΩ@VGS =-1.8V SCHOTTKY  VKA = 20V, VF=0.43V(Typ.)@ IF = 1A  Full RoHS compliance  DFN3X2-8L package design ■APPLICATIONS  Battery Powered System  Notebook Power Management  Cell Phone ■PIN CONFIGURATION PIN1 A A SG DK KKDD TOP VIEW DFN3X2-8L G S P-Channel Mosfet A Schottky Diode ■PART NUMBER INFORMATION STC5853XX-XX X Lead Plating Code Handling Code Package Code Lead Plating Code G : Lead-free product. This product is RoHS compliant Handling Code TR : Tape&Reel Package Code DF : DFN3X2-8L STC5853DF Rev.1.0 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Package STC5853DF-TRG DF DFN3X2-8L ※ Year Code : 0 ~ 9 ※ Week Code : A ~ Z(1~26) ; a ~ z(27~52) ※ DFN3X2-8L : Only available in tape and reel packaging. (A reel contains 3000 devices) ※ G : Lead-free product. This product is RoHS compliant STC5853 Shipping 3000 /Tape&Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical P-Channel MOSFET VDSS Drain-Source Voltage -20 VGSS ID IDM Gate-Source Voltage Continuous Drain Current (TJ=150°C) Pulsed Drain Current TA=25°C TA=70°C ±12 -3.5 -2.8 -15 IS Continuous Source Current (Diode Conduction) -1.4 TJ Operation Junction Temperature -55~150 TSTG PD RθJA Schottky Storage Temperature Range Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C T ≤ 10sec Steady State -55~150 1.25 0.8 65 95 VKA Reverse Voltage 20 IF Continuous Drain Current TA=25°C TA=70°C 1 0.7 IFM Pulsed Drain Current 10 PD Power Dissipation TA=25°C TA=70°C 0.9 0.6 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Unit V V A A A °C W W °C/W V A A W STC5853DF Rev.1.0 Copyright © Semtron Microtech Corp. 2 www.semtron-micro.com STC5853 ■ELECTRICAL CHARACTERISTICS(TA = 25℃ Unless otherwise noted ) Symbol Parameter MOSFET Dynamic Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-source On-Resistance Gfs Forward Transconductance MOSFET Dynamic Parameters Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) tr Turn-On Time td(off) tf Turn-Off Time Condition VGS =0V,ID =250μA VDS =VGS,ID =-250μA VDS =0V,VGS=±12V VDS =-20V,VGS =0V VDS =-20V,VGS =0V TJ =55℃ VGS =-4.5V,ID=-3.5A VGS =-2.5V, ID=-2.4A VGS =-1.8V, ID=-1.8A VDS =-5V,ID =-2.8A VDS =-6V,VGS =-4.5V ID =-2.8A VDS =-6V,VGS =0V f =1MHz VDD =-6V,RL =6Ω ID =-1.0A,VGEN =-4.5V RG =6Ω Min Typ Max Unit -20 V -0.4 -0.9 V ±100 nA -1 μA -5 70 80 95 110 mΩ 125 140 6S 4.8 8 1.0 nC 1.0 485 85 pF 40 10 16 13 23 nS 18 25 15 20 ■ELECTRICAL CHARACTERISTICS(TA = 25℃ Unless otherwise noted ) Symbol Parameter Schottky Parameters VF Forward Voltage Drop VBR Reverse Breakdown Voltage Irm Maximum reverse leakage current CT Junction Capacitance Trr SchottkyReverse Recovery Time Qrr Schottky Reverse Recovery Charge Condition IF =1A IR =500μA VR =23V VR =23V , TJ=70℃ VR = 10V VR =0V , f=1MHz IF =1A, dI/dt =100A/μs IF =1A, dI/dt =100A/μs Min Typ Max Unit 0.43 0.47 V 20 V 0.1 1 mA 31 120 pF 5.4 10 nS 0.8 nC STC5853DF Rev.1.0 Copyright © Semtron Microtech Corp. 3 www.semtron-micro.com ■TYPICAL CHARACTERISTICS (MOSFET) STC5853 -ID-Drain Current(A) Output Characteristics 8 VGS=-5~ -2.5V 6 -2V 4 -1.5V 2 -1V 0 0 1 2 3 45 6 7 8 -VDS-Drain Source Voltage(V) -ID-Drain Current(A) Transfer Characteristics 8 TJ=25°C TJ=125°C 6 TJ=55°C 4 2 0 0123 -VGS-Gate Source Voltage(V) 4 RDS(ON)(mΩ) Drain Source On Resistance 300 250 200 150 VGS=-1.8V 100 50 VGS=-2.5V VGS=-4.5V 0 0 1.5 3 4.5 6 -ID-Drain Current(A) 7.5 Normalized Threshold Voltage Gate Threshold Voltage 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) -VGS(V) Gate Charge 5 4 VDS=10V 3 ID=-2.9A 2 1 0 0 1 23 4 5 67 8 QG-Gate Charge(nC) Normalized On Resistance Drain Source On Resistance 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ-Junction Temperature(°C) STC5853DF Rev.1.0 Copyright © Se.


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