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STP9435 Dataheets PDF



Part Number STP9435
Manufacturers Semtron
Logo Semtron
Description P-Channel Enhancement Mode MOSFET
Datasheet STP9435 DatasheetSTP9435 Datasheet (PDF)

P-Channel Enhancement Mode MOSFET STP9435 -30V P-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STP9435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications.  -30V/-5.8A, RDS(ON) =40mΩ(typ.)@VGS =-10V  -30V/-4.0A, RDS(ON) =52mΩ(typ.)@VGS =.

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P-Channel Enhancement Mode MOSFET STP9435 -30V P-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STP9435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications.  -30V/-5.8A, RDS(ON) =40mΩ(typ.)@VGS =-10V  -30V/-4.0A, RDS(ON) =52mΩ(typ.)@VGS =-4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability STP9435M-TRG ROHS Compliant This is Halogen Free ■APPLICATIONS  Power Management in Note book  Portable Equipment  DSC  LCD Display inverter  Battery Powered System  DC/DC Converter  Load Switch ■PIN CONFIGURATION DDDD S SSG SOP-8 Top View ■PART NUMBER INFORMATION STP 9435 M - TR G a b c de D G S a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code STP9435 Rev.2.4 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code STP9435M-TRG M : SOP-8 ※ Year Code : 00 ~ 90, 2010 : 00 ※ Week Code : 01 ~ 54 ※ SOP-8 : Only available in tape and reel packaging. STP9435 Handling Code TR : Tape&Reel Shipping 2.5K/Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 ID Continuous Drain Current, VGS=10VA TA=25°C TA=70°C -5.8 -4.2 IDM Pulsed Drain CurrentB -20 EAS Single Pulse Avalanche energy L=0.1mH C PD Power Dissipation TA=25°C TA=70°C TJ Operation Junction Temperature 60 2.05 1.5 -55/150 TSTG Storage Temperature Range -55/150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Unit V V A A mJ W °C °C ■THERMAL DATA Symbol RθJA RθJC Parameter Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case Min Typ Max Unit 85 °C/W 58 °C/W STP9435 Rev.2.4 Copyright © Semtron Microtech Corp. 2 www.semtron-micro.com STP9435 ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS =0V,ID =-250μA -30 V VGS(th) Gate Threshold Voltage VDS =VGS,ID =-250μA -1.0 -2.5 V IGSS Gate Leakage Current VDS =0V,VGS=±20V ±100 nA IDSS RDS(ON) Gfs Zero Gate Voltage Drain Current Drain-source On-ResistanceB Forward Transconductance VDS =-24V,VGS =0V VDS =-24V,VGS =0V TJ =55°C VGS =-10V,ID=-5.8A VGS =-4.5V, ID=-4.0A VDS =-10V,ID =-5.8A -1 μA -5 40 52 48 62 mΩ 6S Source-Drain Doide VSD Diode Forward Voltage IS=-2.0A,VGS=0V -0.7 -1.2 V IS Continuous Source CurrentAD -6 A Dynamic Parameters Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =-20V,VGS =-10V ID =-5.8A 6.2 2.5 nC 3.3 Ciss Input Capacitance Coss Output Capacitance VDS =-15V,VGS =0V f =1MHz Crss Reverse Transfer Capacitance 640 270 pF 103 td(on) tr td(off) tf Turn-On Time Turn-Off Time VDD=15V, VGS=-10V, ID=-5A, RG=3.3Ω 9.2 16.5 21.3 nS 21.5 Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% C. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH. D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet STP9435 Rev.2.4 Copyright © Semtron Microtech Corp. 3 www.semtron-micro.com -ID-Drain Current(A) ■TYPICAL CHARACTERISTICS Output Characteristics 10 8 VGS=-5,-6,-7,-8,-9,-10V 6 4 VGS=-3V 2 0 0 0.5 1 1.5 2 -VDS-Drain Source Voltage(V) RDS(ON)(mΩ) Drain Source On Resistance 160 140 120 100 80 60 40 20 0 0 VGS=-4.5V VGS=-10V 4 8 12 16 -ID-Drain Current(A) 20 -VGS(V) Gate Charge 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 QG-Gate Charge(nC) Normalized On Resistance Normalized Threshold Voltage -ID-Drain Current(A) STP9435 Transfer Characteristics 10 8 6 TJ=150°C 4 2 TJ=25°C 0 0 0.2 0.4 0.6 0.8 1 -VGS-Gate Source Voltage(V) Gate Threshold Voltage 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Drain Source On Resistance 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ-Junction.


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