Document
P-Channel Enhancement Mode MOSFET
STP9435
-30V P-Channel Enhancement Mode MOSFET
■DESCRIPTION
■FEATURE
The STP9435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications.
-30V/-5.8A, RDS(ON) =40mΩ(typ.)@VGS =-10V -30V/-4.0A, RDS(ON) =52mΩ(typ.)@VGS =-4.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and Maximum DC
current capability
STP9435M-TRG ROHS Compliant This is Halogen Free
■APPLICATIONS
Power Management in Note book Portable Equipment DSC LCD Display inverter Battery Powered System DC/DC Converter Load Switch
■PIN CONFIGURATION
DDDD
S SSG
SOP-8 Top View
■PART NUMBER INFORMATION
STP 9435 M - TR G a b c de
D
G
S
a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code
STP9435 Rev.2.4 Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com
■ORDERING INFORMATION
Part Number
Package Code
STP9435M-TRG
M : SOP-8
※ Year Code : 00 ~ 90, 2010 : 00 ※ Week Code : 01 ~ 54 ※ SOP-8 : Only available in tape and reel packaging.
STP9435
Handling Code TR : Tape&Reel
Shipping 2.5K/Reel
■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted )
Symbol
Parameter
Typical
VDSS Drain-Source Voltage
-30
VGSS Gate-Source Voltage
±20
ID Continuous Drain Current, VGS=10VA
TA=25°C TA=70°C
-5.8 -4.2
IDM Pulsed Drain CurrentB
-20
EAS Single Pulse Avalanche energy L=0.1mH C
PD Power Dissipation
TA=25°C TA=70°C
TJ Operation Junction Temperature
60
2.05 1.5
-55/150
TSTG Storage Temperature Range
-55/150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Unit V V A
A mJ W °C °C
■THERMAL DATA
Symbol RθJA RθJC
Parameter Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case
Min Typ Max Unit 85 °C/W 58 °C/W
STP9435 Rev.2.4 Copyright © Semtron Microtech Corp.
2
www.semtron-micro.com
STP9435
■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted )
Symbol
Parameter
Condition
Min Typ Max Unit
Static Parameters
V(BR)DSS
Drain-Source Breakdown Voltage VGS =0V,ID =-250μA
-30
V
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID =-250μA
-1.0
-2.5 V
IGSS Gate Leakage Current
VDS =0V,VGS=±20V
±100 nA
IDSS
RDS(ON) Gfs
Zero Gate Voltage Drain Current
Drain-source On-ResistanceB Forward Transconductance
VDS =-24V,VGS =0V
VDS =-24V,VGS =0V TJ =55°C VGS =-10V,ID=-5.8A VGS =-4.5V, ID=-4.0A
VDS =-10V,ID =-5.8A
-1 μA
-5
40 52
48 62
mΩ
6S
Source-Drain Doide
VSD Diode Forward Voltage
IS=-2.0A,VGS=0V
-0.7 -1.2 V
IS Continuous Source CurrentAD
-6 A
Dynamic Parameters
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS =-20V,VGS =-10V ID =-5.8A
6.2 2.5 nC 3.3
Ciss Input Capacitance
Coss Output Capacitance
VDS =-15V,VGS =0V f =1MHz
Crss Reverse Transfer Capacitance
640 270 pF 103
td(on) tr td(off) tf
Turn-On Time Turn-Off Time
VDD=15V, VGS=-10V, ID=-5A, RG=3.3Ω
9.2
16.5 21.3
nS
21.5
Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2%
C. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH. D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date
We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet
STP9435 Rev.2.4 Copyright © Semtron Microtech Corp.
3
www.semtron-micro.com
-ID-Drain Current(A)
■TYPICAL CHARACTERISTICS
Output Characteristics 10
8
VGS=-5,-6,-7,-8,-9,-10V
6
4
VGS=-3V
2
0 0 0.5 1 1.5 2 -VDS-Drain Source Voltage(V)
RDS(ON)(mΩ)
Drain Source On Resistance
160 140 120 100
80 60 40 20
0 0
VGS=-4.5V VGS=-10V
4 8 12 16
-ID-Drain Current(A)
20
-VGS(V)
Gate Charge 10
8
6
4
2
0 0 1 2 3 4 5 6 7 8 9 10 11 12 QG-Gate Charge(nC)
Normalized On Resistance
Normalized Threshold Voltage
-ID-Drain Current(A)
STP9435
Transfer Characteristics 10
8 6 TJ=150°C
4
2 TJ=25°C
0 0 0.2 0.4 0.6 0.8 1 -VGS-Gate Source Voltage(V)
Gate Threshold Voltage 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C)
Drain Source On Resistance 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 -50 -25 0 25 50 75 100 125 150 TJ-Junction.