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STP4407A Dataheets PDF



Part Number STP4407A
Manufacturers Semtron
Logo Semtron
Description P-Channel Enhancement Mode MOSFET
Datasheet STP4407A DatasheetSTP4407A Datasheet (PDF)

P-Channel Fast Switching MOSFETs STP4407A -30V P-Channel Fast Switching MOSFETs ■DESCRIPTION ■FEATURE The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. STP4407AM-TRG ROHS Compliant This is Halogen Free  -30V/-14A, RDS(ON) =8.2mΩ(typ.).

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P-Channel Fast Switching MOSFETs STP4407A -30V P-Channel Fast Switching MOSFETs ■DESCRIPTION ■FEATURE The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. STP4407AM-TRG ROHS Compliant This is Halogen Free  -30V/-14A, RDS(ON) =8.2mΩ(typ.)@VGS = -20V  -30V/-12A, RDS(ON) =9.2mΩ(typ.)@VGS = -10V  -30V/-10A, RDS(ON) =10.8mΩ(typ.)@VGS = -6V  -30V/-7.0A, RDS(ON) =12.5mΩ(typ.)@VGS = -4.5V   Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Power Management in Note book  High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/GA  Networking DC-DC Power System  Load Switch ■PIN CONFIGURATION DDDD S SSG SOP-8 Top View ■PART NUMBER INFORMATION STP 4407A M - TR G a b c de D G S a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code STP4407AM-TRG M : SOP-8 ※ SOP-8 : Only available in tape and reel packaging. STP4407A Handling Code TR : Tape&Reel Shipping 2.5K/Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 ID Continuous Drain Current, VGS=10VA TA=25°C TA=70°C -14 -10 IDM Pulsed Drain CurrentB -50 EAS Single Pulse Avalanche energy L=0.1mH C PD Power Dissipation TA=25°C TA=70°C TJ Operation Junction Temperature 100 3.1 2.0 -55/150 TSTG Storage Temperature Range -55/150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Unit V V A A mJ W °C °C ■THERMAL DATA Symbol RθJA RθJC Parameter Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case Min Typ Max Unit 40 °C/W 24 °C/W STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. 2 www.semtron-micro.com STP4407A ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS =0V,ID =-250μA -30 V VGS(th) Gate Threshold Voltage VDS =VGS,ID =-250μA -1.0 -2.0 V IGSS Gate Leakage Current VDS =0V,VGS=±20V ±100 nA IDSS RDS(ON) Rg Zero Gate Voltage Drain Current Drain-source On-ResistanceB Gate resistance VDS =-24V,VGS =0V VDS =-24V,VGS =0V TJ =55°C VGS =-20V,ID=-14A VGS =-10V,ID=-12A VGS =-6.0V,ID=-10A VGS =-4.5V, ID=-7A VDS =VGS=0V, f=1MHZ -1 μA -5 8.2 10 9.2 10.8 12 13 mΩ 12.5 15 2Ω Source-Drain Doide VSD Diode Forward Voltage IS=-2.0A,VGS=0V -0.7 -1.2 V IS Continuous Source CurrentAD -14 A Dynamic Parameters Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =-15V,VGS =-4.5V ID =-14A 30 4.4 10.2 nC Ciss Input Capacitance Coss Output Capacitance VDS =-15V,VGS =0V f =1MHz Crss Reverse Transfer Capacitance 1580 321 250 pF td(on) tr td(off) tf Turn-On Time Turn-Off Time VDD=-15V, VGS=-10V, ID=-1A, RG=6Ω 13.2 15 52 30 nS Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% C. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH. D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. 3 www.semtron-micro.com ■TYPICAL CHARACTERISTICS -ID-Drain Current(A) 16 14 12 10 8 6 4 2 0 0 Output Characteristics VGS=-5 ,-6, -10V, -20V VGS=-4.5V 0.5 1 1.5 2 2.5 -VDS-Drain Source Voltage(V) 3 RDS(ON)(mΩ) 21 19 17 15 13 11 9 7 5 0 Drain Source On Resistance VGS=-4.5V VGS=-6V VGS=-10.0V VGS=-20V 4 8 12 16 20 24 28 32 -ID-Drain Current(A) -VGS(V) 20 16 12 8 4 0 0 Gate Charge 5 10 15 20 25 30 35 QG-Gate Charge(nC) Normalized On Resistance Normalized Threshold Voltage -ID-Drain Current(A) STP4407A Transfer Characteristics 10 8 6 TJ=150°C 4 2 TJ=25°C 0 0 0.2 0.4 0.6 0.8 1 -VGS-Gate Source Voltage(V) Gate Threshold Voltage 2 1.6 1.2 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 T.


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