Document
P-Channel Fast Switching MOSFETs
STP4407A
-30V P-Channel Fast Switching MOSFETs
■DESCRIPTION
■FEATURE
The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications.
STP4407AM-TRG ROHS Compliant This is Halogen Free
-30V/-14A, RDS(ON) =8.2mΩ(typ.)@VGS = -20V -30V/-12A, RDS(ON) =9.2mΩ(typ.)@VGS = -10V -30V/-10A, RDS(ON) =10.8mΩ(typ.)@VGS = -6V -30V/-7.0A, RDS(ON) =12.5mΩ(typ.)@VGS = -4.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and Maximum DC
current capability
■APPLICATIONS
Power Management in Note book High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/GA Networking DC-DC Power System Load Switch
■PIN CONFIGURATION
DDDD
S SSG
SOP-8 Top View
■PART NUMBER INFORMATION
STP 4407A M - TR G a b c de
D
G
S
a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code
STP4407A Rev.1.1 Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com
■ORDERING INFORMATION
Part Number
Package Code
STP4407AM-TRG
M : SOP-8
※ SOP-8 : Only available in tape and reel packaging.
STP4407A
Handling Code TR : Tape&Reel
Shipping 2.5K/Reel
■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted )
Symbol
Parameter
Typical
VDSS Drain-Source Voltage
-30
VGSS Gate-Source Voltage
±20
ID Continuous Drain Current, VGS=10VA
TA=25°C TA=70°C
-14 -10
IDM Pulsed Drain CurrentB
-50
EAS Single Pulse Avalanche energy L=0.1mH C
PD Power Dissipation
TA=25°C TA=70°C
TJ Operation Junction Temperature
100
3.1 2.0
-55/150
TSTG Storage Temperature Range
-55/150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Unit V V A
A mJ W °C °C
■THERMAL DATA
Symbol RθJA RθJC
Parameter Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case
Min Typ Max Unit 40 °C/W 24 °C/W
STP4407A Rev.1.1 Copyright © Semtron Microtech Corp.
2
www.semtron-micro.com
STP4407A
■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted )
Symbol
Parameter
Condition
Min Typ Max Unit
Static Parameters
V(BR)DSS
Drain-Source Breakdown Voltage VGS =0V,ID =-250μA
-30
V
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID =-250μA
-1.0
-2.0 V
IGSS Gate Leakage Current
VDS =0V,VGS=±20V
±100 nA
IDSS
RDS(ON) Rg
Zero Gate Voltage Drain Current Drain-source On-ResistanceB Gate resistance
VDS =-24V,VGS =0V
VDS =-24V,VGS =0V TJ =55°C VGS =-20V,ID=-14A VGS =-10V,ID=-12A VGS =-6.0V,ID=-10A VGS =-4.5V, ID=-7A
VDS =VGS=0V, f=1MHZ
-1 μA
-5
8.2 10
9.2 10.8
12 13
mΩ
12.5 15
2Ω
Source-Drain Doide
VSD Diode Forward Voltage
IS=-2.0A,VGS=0V
-0.7 -1.2 V
IS Continuous Source CurrentAD
-14 A
Dynamic Parameters
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS =-15V,VGS =-4.5V ID =-14A
30 4.4 10.2
nC
Ciss Input Capacitance
Coss Output Capacitance
VDS =-15V,VGS =0V f =1MHz
Crss Reverse Transfer Capacitance
1580 321 250
pF
td(on) tr td(off) tf
Turn-On Time Turn-Off Time
VDD=-15V, VGS=-10V, ID=-1A, RG=6Ω
13.2 15 52 30
nS
Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2%
C. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH. D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date
We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet
STP4407A Rev.1.1 Copyright © Semtron Microtech Corp.
3
www.semtron-micro.com
■TYPICAL CHARACTERISTICS
-ID-Drain Current(A)
16 14 12 10
8 6 4 2 0
0
Output Characteristics
VGS=-5 ,-6, -10V, -20V VGS=-4.5V
0.5 1 1.5 2 2.5 -VDS-Drain Source Voltage(V)
3
RDS(ON)(mΩ)
21 19 17 15 13 11
9 7 5
0
Drain Source On Resistance
VGS=-4.5V
VGS=-6V VGS=-10.0V
VGS=-20V
4 8 12 16 20 24 28 32 -ID-Drain Current(A)
-VGS(V)
20 16 12
8 4 0
0
Gate Charge
5 10 15 20 25 30 35 QG-Gate Charge(nC)
Normalized On Resistance
Normalized Threshold Voltage
-ID-Drain Current(A)
STP4407A
Transfer Characteristics 10
8 6 TJ=150°C
4 2 TJ=25°C
0 0 0.2 0.4 0.6 0.8 1 -VGS-Gate Source Voltage(V)
Gate Threshold Voltage 2
1.6
1.2
0.8
0.4
0 -50 -25 0 25 50 75 100 125 150 T.