Document
Surface Mount Fast Switching Diode Array
COMCHIP
www.comchiptech.com
CDSV5-4448C2 CDSV6-4448A2 / S2
Current :500 mA
Voltage:100 Volts
SOT-363/SOT-353
0.10/0.30
Orientation Indicator applies only to parts where shown below
Features
Fast Switching Speed
Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance
Features
Case: SOT-353 and SOT-363, Molded Plastic
1.15/1.35 2.00/2.20
This pin omitted for SOT-353
Case Material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202,Method 208 Weight: 0.006 grams (approx.)
A1
1.80/2.20
0.90/1.0
.25/.40
Max0.10
C A2
C1
A
C2
AC
1
C2
A2
0.65 Nominal.30/.40 All Dimensions in mm
0.10/0.25
A4
A3
C4
NC
C3
A1
C1
AC
2
CDSV5-4448C2
CDSV6-4448A2
CDSV6-4448S2
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
VRM
VRRM VRWM VR
VR(RMS)
IFM
IO
IFSM
Pd
RqJA
Tj , TSTG
Value
100
80
57
500
250
4.0 2.0
200
625
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
VBR(R)
VFM
Min
80
0.62 ¾ ¾ ¾
¾
¾
¾
Max
¾
0.72 0.855 1.0 1.25
100 50 30 25
3.5
4.0
Unit
V
Test Condition
IR = 100mA
IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA
VR = 70V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V
VR = 6, f = 1.0MHz
VR = 6V, IF = 5mA
Maximum Forward Voltage (Note 2)
V
Maximum Peak Reverse Current (Note 2)
Junction Capacitance
Reverse Recovery Time
Notes:
IRM
Cj
trr
nA mA mA nA
pF
ns
2. Short duration pulse test used to minimize self-heating effect.
MDS0308001A
Page 1
Surface Mount Fast Switching Diode Array
Rating and Characteristic Curves
2.5
Trr, REVERSE RECOVERY TIME (nS)
COMCHIP
www.comchiptech.com
10.0
IR, REVERSE CURRENT (mA)
2.0
Ta = 100°C
1.0
1.5
Ta = 75°C
0.10
Ta = 50°C Ta = 25°C
1.0
0.5
0.01
Ta = -30°C
Ta = 0°C
0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig. 1. Reverse Recovery Time vs. Forward Current
4
0.001
0
20
40
60
80
VR, REVERSE VOLTAGE (V) Fig. 2 Reverse Current vs Reverse Voltage
100
CJ, JUNCTION CAPACITANCE (pF)
3
IF, FORWARD CURRENT (mA)
10
Ta = 25°C
2
Ta = 50°C
Ta = 85°C
1
1
Ta = 0°C
Ta = -30°C
0 0 1 2
3
4
5
6
0.1
0
VR, REVERSE VOLTAGE (V) Fig. 3. Typical Junction Capacitance vs. Reverse Voltage
200
400
600
800
1000
VF, FORWARD VOLTAGE (mV) Fig. 4 Forward Current vs. Forward Voltage
MDS0308001A
Page 2
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