Document
CEP1012/CEB1012
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
120
±20
15 40 100 0.8
Operating and Store Temperature Range
TJ,Tstg
-65 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.25 62.5
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2007.May http://www.cetsemi.com
CEP1012/CEB1012
Electrical Characteristics T.