TIC126D

isc Thyristors TIC126D APPLICATIONS ·12A contimunous on-state current ·100A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 400 400 7.5 12 100 5 1 110 -40 ~+125 2.4 62.5 UNIT V V A A A W W ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM, Tj=110℃ 2.0 mA IDRM Repetitive peak off-state current VRM=VRRM, Tj=110℃ 2.0 mA VTM On-state voltage ITM= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is registered trademark Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC produ...