TIC216D

isc Triacs TIC216D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)TC=70℃ ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 400 400 6 60 110 -45~150 2.5 62.5 UNIT V V A A ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ IGT Gate trigger current Ⅰ Ⅱ Ⅲ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅳ IH Holding current VGT Gate trigger voltage Vsupply = 12 V†, IG= 0 initial ITM= 100mA Ⅰ Ⅱ Ⅲ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅳ VTM On-state voltage IT= 8.4A; IG= 50mA MAX UNIT 2.0 mA 5 5 mA 5 10 30 mA 2.2 2.2 2.2 V 3.0 1.7 V isc website：www.iscsemi.cn 1 isc&iscsemi is registered trademark Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in gener...