TIP147T

TIP145T/146T/147T TIP145T/146T/147T ◎ SEMIHOW REV.A0,Oct 2007 TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140/141/142 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP145T : TIP146T : TIP147T VCBO -60 -80 -100 V V V Collector-Emitter Voltage : TIP145T : TIP146T : TIP147T VCEO -60 -80 -100 V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG -5 -10 -15 -0.5 2 80 150 -65~150 V A A A W W ℃ ℃ PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit TO-220 1. Base 2. Collector 3. Emitter 12 3 Electrical Characteristics Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Emitter Sustaining Voltage : TIP145T : TIP146T : TIP147T VCEO(SUS) IC=-30mA, IB=0 Collector Cut-off Current : TIP145T : TIP146T : TIP147T Collector Cut-off Current : TIP145T : TIP146T : TIP147T Emitter Cut-off Current DC Current Gain ICEO ICBO IEBO hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter ON Voltage Output Capacitance * Pulse Test: PW≤300us, Duty Cycle≤2% VBE(on) C...