TIP145T/146T/147T
TIP145T/146T/147T
◎ SEMIHOW REV.A0,Oct 2007
TIP145T/146T/147T
TIP145T/146T/147T
Monolithic Constru...
TIP145T/146T/147T
TIP145T/146T/147T
◎ SEMIHOW REV.A0,Oct 2007
TIP145T/146T/147T
TIP145T/146T/147T
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140/141/142
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP145T : TIP146T : TIP147T
VCBO
-60 -80 -100
V V V
Collector-Emitter Voltage : TIP145T : TIP146T : TIP147T
VCEO
-60 -80 -100
V V V
Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
VEBO IC ICP IB PC PC TJ
TSTG
-5 -10 -15 -0.5
2 80 150 -65~150
V A A A W W ℃ ℃
PNP Epitaxial Silicon Darlington
Transistor
Equivalent Circuit
TO-220 1. Base 2. Collector 3. Emitter
12 3
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage : TIP145T : TIP146T : TIP147T
VCEO(SUS)
IC=-30mA, IB=0
Collector Cut-off Current : TIP145T : TIP146T : TIP147T
Collector Cut-off Current : TIP145T : TIP146T : TIP147T
Emitter Cut-off Current
DC Current Gain
ICEO
ICBO
IEBO hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter ON Voltage Output Capacitance * Pulse Test: PW≤300us, Duty Cycle≤2%
VBE(on) C...