DatasheetsPDF.com

CEB4060A Dataheets PDF



Part Number CEB4060A
Manufacturers Chino-Excel Technology
Logo Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEB4060A DatasheetCEB4060A Datasheet (PDF)

CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Cont.

  CEB4060A   CEB4060A


Document
CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 17 12 68 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 47 0.4 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . Symbol RθJC RθJA 1 Limit 3.2 50 Units C/W C/W Rev 2. 2010.Sep http://www.cetsemi.com CEP4060A/CEB4060.


CEB4060 CEB4060A CEB4060AL


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)