Document
NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors
Darlington Power Amplifier
Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
Features: D High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
Collector–Emitter SustainingVoltage Collector Cutoff Current
Emitter Cutoff Current ON Characteristics (Note 1)
VCEO(sus) IC = 100mA, IB = 0 ICEO VCE = 50V, IE = 0 ICEX VCE = 100V, VBE(off) = 1.5V VCE = 100V, VBE(off) = 1.5V, TA = +150°C IEBO VBE = 5V, IC = 0
100 –
–
– – 1.0
– – 0.5
– – 5.0
– – 2.0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics
hFE
VCE(sat)
VBE(sat) VBE(on)
VCE = 3V, IC = 10A VCE = 3V, IC = 20A IC = 10A, IB = 40mA IC = 20A, IB = 200mA IC = 20A, IB = 200mA VCE = 3V, IC = 10A
750 – 18000
100 –
–
– – 2.0
– – 3.0
– – 4.0
– – 2.8
Small–Signal Current Gain
hfe VCE = 3V, IC = 10A, f = 1kHz
Magnitude of Common Emitter Small–Signal Short–Circuit
|hfe| VCE = 3V, IC = 10A, f = 1MHz
Forward Current Transfer Ratio
300 – 4.0 –
– –
Output Capacitance NTE251 NTE252
Cob VCB = 10V, IE = 0, f = 0.1MHz
– – 400 – – 600
Unit
V mA mA mA mA
V V V V
MHz
pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Schematic Diagram
CC BB
NPN
E
PNP
E
.350 (8.89)
.135 (3.45) Max
.875 (22.2) Dia Max
Seating Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430 (10.92)
.665 (16.9)
.156 (3.96) Dia (2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case
.