CPC3960

INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 600V RDS(on) (max) 44 IDSS (min) 100mA Package SOT-223 Features High Breakdown Voltage: 600V On-Resistance: 44 max. at 25ºC Low VGS(off) Voltage: -1.4 to -3.1V High Input Impedance Small Package Size: SOT-223 Applications Current Regulator Normally-On Switches Solid State Relays Converters Telecommunications Power Supply CPC3960 600V N-Channel Depletion-Mode FET Description The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown, which makes the CPC3960 ideal for use in high-power applications. The CPC3960 is a highly reliable FET device that has been used extensively in IXYS Integrated Circuits Division’s Solid State Relays for industrial and telecommunications applications. The CPC3960 is available in the SOT-223 package. Ordering Information Part # CPC3960ZTR Description SOT-223: Tape and Reel (1000/Reel) Package Pinout D 4 123 GDS Circuit Symbol G D S DS-CPC3960-R02 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Drain-to-Source Voltage 600 V Gate-to-Source ...