CPC5603

INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 415 14 2.5 Units V  W Features 415V Drain-to-Source Voltage Depletion Mode Device Offers Low RDS(on) at Cold Temperatures Low On-Resistance: 8 (Typical) @ 25°C Low VGS(off) Voltage: -2.0V to -3.6V High Input Impedance Low Input and Output Leakage Small Package Size SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Applications Support Component for LITELINK™ Data Access Arrangement (DAA) Telecom Normally-On Switches Ignition Modules Converters Security Power Supplies CPC5603 N-Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications, security, and power supplies. One of the primary applications for the CPC5603 is as a linear regulator/hook switch for the LITELINK™ family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A. The CPC5603 has a typical on-resistance of 8, a drain-to-source voltage of 415V and is available in the SOT-223 package. As with all MOS devices, the FET struct...