CEP603ALS2/CEB603ALS2
March 1998
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 25A , RD...
CEP603ALS2/CEB603ALS2
March 1998
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
30V , 25A , RDS(ON)=22m Ω @VGS=10V. RDS(ON)=40mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
G
D
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @TJ=125 C -Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C Derate above 25 C
Operating and StorageTemperature Range
Symbol VDS VGS ID IDM IS
PD
TJ, TSTG
Limit
30
Ć20
25
100 25 50 0.4 -65 to 175
Unit
V V
A A A W W/ C C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
RįJC RįJA
15-17
3 62.5
C /W C /W
15
CEP603ALS2/CEB603ALS2
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol Con...
