IXA70I1200NA

XPT IGBT Single IGBT Part number IXA70I1200NA IXA70I1200NA VCES I C25 VCE(sat) = = = 1200 V 100 A 1.8 V (G) 2 (C) 3 (E) 1+4 Backside: isolated Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Applications: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans Package: SOT-227B (minibloc) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling ● Either emitter terminal can be used as main or Kelvin emitter IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140708c IXA70I1200NA IGBT Symbol VCES VGES VGEM I C25 I C80 Ptot VCE(sat) Definition collector emitter voltage max. DC gate voltage max. transient gate emitter voltage collector current total power dissipation collector emitter saturation voltage VGE(th) I CES gate emitter threshold voltage collector emitte...