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IXFA18N60X Dataheets PDF



Part Number IXFA18N60X
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFA18N60X DatasheetIXFA18N60X Datasheet (PDF)

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TLTL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Wi.

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TLTL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 18 36 5 500 50 320 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247 & TO-220) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 2.5 4.5 V 100 nA 10 A 500 A 230 m © 2015 IXYS CORPORATION, All Rights Reserved GD S TO-247 (IXFH) D (Tab) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls DS100660A(5/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-220 TO-247 IXFA18N60X Characteristic Values Min. Typ. Max 6 10 S 3.3  1440 1110 14 pF pF pF IXFP18N60X IXFH18N60X 84 pF 255 pF 20 30 63 24 35 8 18 0.50 0.21 ns ns ns ns nC nC nC 0.39 C/W C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 9A, -di/dt = 100A/μs VR = 100V Characteristic Values Min. Typ. Max 18 A 72 A 1.4 V 127 ns 705 nC 11 A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a.


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