Power MOSFET
X-Class HiPerFETTM Power MOSFET
Preliminary Technical Information
IXFA18N60X IXFP18N60X IXFH18N60X
VDSS = ID25 = RDS...
Description
X-Class HiPerFETTM Power MOSFET
Preliminary Technical Information
IXFA18N60X IXFP18N60X IXFH18N60X
VDSS = ID25 = RDS(on)
600V 18A 230m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
G S D (Tab)
TO-220AB (IXFP)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TLTL TSOLD FC Md
Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings 600 600
30 40
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
18 36
5 500
50
320
-55 ... +150 150
-55 ... +150
A A
A mJ
V/ns
W
C C C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 260
°C °C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-247 & TO-220)
1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5 g 3.0 g 6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
600 V
2.5 4.5 V
100 nA
10 A 500 A
230 m
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GD S TO-247 (IXFH)
D (Tab)
G DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
...
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