CEP6060L/CEB6060L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RD...
CEP6060L/CEB6060L
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM PD
60
±16
52.4 37 210 120 0.8
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.24 62.5
Units V V A A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2011.Jun http://w...