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IXFP30N60X Dataheets PDF



Part Number IXFP30N60X
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFP30N60X DatasheetIXFP30N60X Datasheet (PDF)

X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFA30N60X IXFP30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ .

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X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFA30N60X IXFP30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 30 60 10 1 50 500 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220) 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 2.5 4.5 V 100 nA 25 A 750 A 155 m TO-263 (IXFA) G S TO-220 (IXFP) D (Tab) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved DS100667(5/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-220 Characteristic Values Min. Typ. Max 10 17 S 2.6  2270 1610 14 pF pF pF 120 375 21 43 58 33 56 12 28 0.50 pF pF ns ns ns ns nC nC nC 0.25 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 15A, -di/dt = 100A/μs VR = 100V Characteristic Values Min. Typ. Max 30 A 120 A 1.4 V 145 ns 860 nC 12 A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXFA30N60X IXFP30N60X TO-263 Outline E A C2 L1 D 123 L2 D1 A1 H E1 4 b2 b A2 1 - Gate 2,4 - Drain 3 - Source L3 c 0 ee 0.43 [11.0] 0.66 [16.6] 0.34 [8.7] 0.20 [5.0] 0.12 [3.0] 0.10 [2.5] 0.06 [1.6] TO-220 Outline E oP A A1 Q H1 D D1 EJECTOR PIN L1 L A2 e e1 c 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source D2 E1 ADVANCE TECHNICAL INFORMAT.


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