Document
CEP703ALS2/CEB703ALS2
PRELIMINARY
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 40A , RDS(ON)=17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
G
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @TJ=125 C -Pulsed
ID IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C Derate above 25 C
PD
15 Operating and StorageTemperature Range TJ, TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
RįJC RįJA
Limit 30
Ć20
40 120 40 50 0.4 -65 to 175
3 62.5
Unit V V A A A W W/ C C
C /W C /W
15-12
CEP703ALS2/CEB703ALS2
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
.